PART |
Description |
Maker |
ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-10 |
3.3V In-System Programmable SuperFAST?High Density PLD CRYSTAL 32.768KHZ 12.5PF SMD 3.3V In-System Programmable SuperFAST?/a> High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3V In-System Programmable SuperFAST High Density PLD CRYSTAL 12.0 MHZ 20PF SMD 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA208 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 6 ns, PBGA208 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA100 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP160 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP100 3.3V In-System Programmable SuperFASTHigh Density PLD 3.3在系统可编程超快⑩高密度可编程逻辑器件 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD 3.3V In-System Programmable SuperFAST?/a> High Density PLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
ISPLSI2064VL-100LB100 ISPLSI2064VL-100LJ44 ISPLSI2 |
2.5V In-System Programmable SuperFAST?High Density PLD 2.5V In-System Programmable SuperFAST?/a> High Density PLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD Turns Counting Dial; Number of Turns:10; Knob/Dial Style:Round Skirted With Indicator Line; Body Material:Aluminum; Shaft Size:1/4; Color:Satin RoHS Compliant: Yes EE PLD, 10 ns, PQFP100 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP100 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD 170 MHz in-system prommable high density PLD 125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
ISPLSI2096E-100LQ128 ISPLSI2096E-100LT128 ISPLSI20 |
In-SystemProgrammableSuperFASTHighDensityPLD In-System Programmable SuperFAST?/a> High Density PLD In-System Programmable SuperFAST High Density PLD In-System Programmable SuperFAST⑩ High Density PLD In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP128 In-System Programmable SuperFAST??High Density PLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor, Corp. LATTICE SEMICONDUCTOR CORP
|
ISPLSI2032E ISPLSI2032E-110LJ44 ISPLSI2032E-110LT4 |
In-SystemProgrammableSuperFASTHighDensityPLD In-System Programmable SuperFASTHigh Density PLD In-System Programmable SuperFAST High Density PLD 在系统可编程超快高密度可编程逻辑器件
|
Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
ISPLSI2064V-100LJ84 ISPLSI2064V-100LJ84I ISPLSI206 |
3.3V High Density Programmable Logic 3.3V High Density Programmable Logic 3.3高密度可编程逻辑 3.3V High Density Programmable Logic EE PLD, 15 ns, PQCC84
|
Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
ISPLSI2032VE06 ISPLSI2032VE300LB49 ISPLSI2032VE300 |
3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST PLD 3.3V In-System Programmable High Density SuperFAST垄芒 PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST?PLD
|
Lattice Semiconductor
|
LTV8192M LTV-819-1S-TA LTV829S-V LTV-829S-TA LTV82 |
High Density Mounting Type Photocoupler 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER High Density Mounting Type Photocoupler 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER High Density Mounting Type Photocoupler(762.22 k) 高密度安装类型光电耦合62.22十一
|
Lite-On Technology, Corp.
|
ISPLSI5512VE-155LF256 ISPLSI5512VE-155LB272 ISPLSI |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. EE PLD, 10 ns, PBGA388 In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
|
LATTICE SEMICONDUCTOR CORP
|